On Tuesday, Intel and Micron Technology announced the development of high-data-capacity flash memory technology for flash cards and USB drives.
Intel-Micron chip will enable high-capacity USB drives
And in a related announcement, Intel said Monday that it has validated a fix for its new 34-nanometer X25-M solid-state drive, which is based on similar flash memory technology. The bug affects users who set a BIOS drive password. That update is available here.
The two chipmakers, which partner in the manufacture of flash memory chips, said Tuesday that they have developed NAND flash memory capable of 3 bits per cell based on 34-nanometer technology. This allows greater data density than the standard 2-bits-per-cell technology and will result in high-capacity USB flash drives, according to Micron.
While packing more bits into a cell provides greater data densities, it is not as reliable as flash memory based on more standard technology, according to Kevin Kilbuck, director of NAND marketing at Micron. Therefore, the 3-bits-per-cell chips will be limited initially to flash drives, which don't require the data storage reliability of a solid-state drive, which is used as the primary storage device in laptops and servers.